• Study of indium tin oxide–MoS2 interface by atom probe tomography 

      Ramos Murillo, Manuel Antonio (2019-12)
      The molybdenum disulfide (MoS2) and indium tin oxide (ITO) interface were studied by atom probe tomography (APT). Raman spectroscopy, scanning electron microscopy, and grazingincidence x-ray diffraction measurements were ...
    • The electronic states of ITO–MoS2: Experiment and theory 

      Ramos Murillo, Manuel Antonio; 187047; López Galan, Óscar; Nogan, John; Ávila-García, Alejandro; Boll, Torben; Heilmaier, Martin (2021-12-16)
      We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ...
    • The Piezoresponse in WO3 Thin Films Due to N2-Filled Nanovoids Enrichment by Atom Probe Tomography 

      Ramos Murillo, Manuel Antonio (2023-02-07)
      Tungsten trioxide (WO3) is a versatile n-type semiconductor with outstanding chromogenic properties highly used to fabricate sensors and electrochromic devices. We present a comprehensive experimental study related to ...

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