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dc.contributor.authorLi, Zongbin
dc.date.accessioned2019-06-17T19:02:39Z
dc.date.available2019-06-17T19:02:39Z
dc.date.issued2019-03-01
dc.identifier.urihttp://cathi.uacj.mx/20.500.11961/7866
dc.description.abstractThe reversibility of the giant magnetocaloric effect (MCE) through the magnetic field–induced magnetostructural transformation in Ni–Mn–In‐based alloys is a key issue towards the potential magnetic refrigeration applications. In this work, Co and Cu are simultaneously doped to tune the reversible magnetocaloric properties associated with the magnetostructural transformation. Owing to the integration of large magnetization difference ΔM, suitable transformation entropy ΔStr, and narrow thermal hysteresis ΔThys in a Ni46Co3Mn35Cu2In14 alloy, the reversible field–induced inverse martensitic transformation is realized in a wide temperature range of 30 K under the field of 5T, yielding a maximum reversible magnetic entropy change ΔSMmax of 16.4 J kg−1 K−1. Moreover, under a low field change of 1.5T, a large reversible adiabatic temperature variation ΔTad of 2.5 K is also obtained, representing the highest value so far under the low field change of 1.5T in Ni–Mn‐based alloys. It is demonstrated that multi‐component alloying by combining the effects of appropriate substitutional elements is an effective way to develop high‐performance magnetocaloric materials.es_MX
dc.language.isoenes_MX
dc.relation.ispartofProducto de investigación IITes_MX
dc.relation.ispartofInstituto de Ingeniería y Tecnologíaes_MX
dc.rightsAtribución-NoComercial-SinDerivadas 2.5 México*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/mx/*
dc.subjectvariación de temperatura adiabáticaes_MX
dc.subjectaleaciones basadas Ni-Mn-Ines_MX
dc.subjectefecto magnetocalóricoes_MX
dc.subjecttransformación magnetoestructurales_MX
dc.subject.otherinfo:eu-repo/classification/cti/1es_MX
dc.titleTuning the reversible magnetocaloric effect in Ni-Mn-In based alloys through Co and Cu co-dopinges_MX
dc.typeArtículoes_MX
dcterms.thumbnailhttp://ri.uacj.mx/vufind/thumbnails/rupiiit.pnges_MX
dcrupi.institutoInstituto de Ingeniería y Tecnologíaes_MX
dcrupi.cosechableSies_MX
dcrupi.norevista3es_MX
dcrupi.volumen5es_MX
dcrupi.nopagina1800845 1-9es_MX
dc.identifier.doihttp://dx.doi.org/10.1002/aelm.201800845es_MX
dc.contributor.coauthorFeng, Jing
dc.contributor.coauthorYang, Jiajing
dc.contributor.coauthorLi, Zhenzhuang
dc.contributor.coauthorYang, Bo
dc.contributor.coauthorYan, Haile
dc.contributor.coauthorSánchez Llamazares, José Luis
dc.contributor.coauthorZhang, Yudong
dc.contributor.coauthorEsling, Claude
dc.contributor.coauthorZhao, Xiang
dc.contributor.coauthorZuo, Liang
dc.contributor.coauthorSanchez Valdes, Cesar Fidel
dc.journal.titleAdvanced Electronic Materialses_MX
dc.lgacSin línea de generaciónes_MX
dc.cuerpoacademicoSin cuerpo académicoes_MX


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