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Airy pattern on narrow photoluminescence spectrum of band to band recombination in CdTe:Te thin films
dc.contributor.author | Becerril-Silva, M. | |
dc.date.accessioned | 2019-01-10T16:27:12Z | |
dc.date.available | 2019-01-10T16:27:12Z | |
dc.date.issued | 2018-02-01 | |
dc.identifier.uri | http://cathi.uacj.mx/20.500.11961/5490 | |
dc.description.abstract | Semiconductor CdTe:Te films were deposited by means of rf sputtering on glass substrates. The excess of Te gave place to a high number of Cd-vacancies (VCd) producing p-type CdTe films. The density of carriers produced a high strength surface electric field which allowed obtain the bandgap value employing modulated transmittance spectroscopy. The obtained bandgap value of 1.40 ± 0.01 eV was confirmed by absorption spectroscopy measures. The density of holes is so high that bandgap renormalization is observed. Photoluminescence (PL) measurements were carried out with the down-converted 883.2 nm (1.403 eV) line of the 441.6 nm wavelength of a He-Cd laser. This energy allows to produce a resonant excitation of the CdTe:Te films, in such a way that electrons from the conduction band (CB) can be just excited to the valence band (VB). The resonant excitation produced a PL spectrum of band to band electron-hole recombination showing discrete energy emissions that follow the pattern of oscillations corresponding to the Airy model for a quantum triangular potential well. The average width of signals of the higher energy oscillations is 12 ± 3 μeV and separation between energy levels is of the order of 12 ± 3 μeV. | es_MX |
dc.description.uri | https://www.sciencedirect.com/science/article/pii/S0022231317309316 | es_MX |
dc.language.iso | en_US | es_MX |
dc.relation.ispartof | Producto de investigación IIT | es_MX |
dc.relation.ispartof | Instituto de Ingeniería y Tecnología | es_MX |
dc.rights | CC0 1.0 Universal | * |
dc.rights.uri | http://creativecommons.org/publicdomain/zero/1.0/ | * |
dc.subject | Airy pattern | es_MX |
dc.subject | CdTe | es_MX |
dc.subject | thin film | es_MX |
dc.subject.other | info:eu-repo/classification/cti/7 | es_MX |
dc.title | Airy pattern on narrow photoluminescence spectrum of band to band recombination in CdTe:Te thin films | es_MX |
dc.type | Artículo | es_MX |
dcterms.thumbnail | http://ri.uacj.mx/vufind/thumbnails/rupiiit.png | es_MX |
dcrupi.instituto | Instituto de Ingeniería y Tecnología | es_MX |
dcrupi.cosechable | Si | es_MX |
dcrupi.norevista | 1 | es_MX |
dcrupi.volumen | 194 | es_MX |
dcrupi.nopagina | 565-568 | es_MX |
dc.identifier.doi | 10.1016/j.jlumin.2017.09.011 | es_MX |
dc.contributor.coauthor | Meléndez-Lira, M. | |
dc.contributor.coauthor | Zelaya-Angel, O. | |
dc.contributor.coauthor | Farias, Rurik | |
dc.journal.title | Journal of Luminescence | es_MX |
dc.lgac | PROPIEDADES FÍSICAS DE MATERIALES NANOESTRUCTURADOS Y SUS APLICACIONES | es_MX |
dc.cuerpoacademico | Física de Materiales | es_MX |