Listar IIT por autor "Nogan, John"
Mostrando ítems 1-6 de 6
-
Critical dimensions of MoS2, WS2 and WO3 thin films: Potential Photovoltaic Applications
Ramos Murillo, Manuel Antonio (2023-07-26)The study of the materials molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), and tungsten trioxide (WO3) in the form of a thin film is of great relevance, primarily to understand their physicochemical properties ... -
Determining the Electronic Structure and Thermoelectric Properties of MoS2/MoSe2 Type-I Heterojunction by DFT and the Landauer Approach
Perez, Israel; Ramos Murillo, Manuel Antonio; López-Galán, Óscar; Nogan, John (2023-03-09)The electronic structure and thermoelectric properties of MoX2 (X = S, Se) Van der Waals heterojunctions are reported, with the intention of motivating the design of electronic devices using such materials. Calculations ... -
Películas delgadas de WO3 con dopaje de iones metálicos: En búsqueda de piezoelectricidad
Enriquez Carrejo, Jose Luis; Ramos Murillo, Manuel Antonio; 206521; Pineda, Pamela; Nogan, John; Boll, Torben; Hurtado, Abel; Heilmaier, Martin (Universidad Autónoma de Ciudad Juárez, 2021-11-11)El presente trabajo de investigación se enfoca en la fabricación de películas delgadas de WO3 con dopaje de iones metálicos (Al, Pt, Au, Mo), depositadas mediante pulverización catódica con potencia de radiofrecuencia y ... -
The electronic states of ITO–MoS2: Experiment and theory
Ramos Murillo, Manuel Antonio; 187047; López Galan, Óscar; Nogan, John; Ávila-García, Alejandro; Boll, Torben; Heilmaier, Martin (2021-12-16)We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ... -
The Piezoresponse in WO3 Thin Films Due to N2-Filled Nanovoids Enrichment by Atom Probe Tomography
Ramos Murillo, Manuel Antonio (2023-02-07)Tungsten trioxide (WO3) is a versatile n-type semiconductor with outstanding chromogenic properties highly used to fabricate sensors and electrochromic devices. We present a comprehensive experimental study related to ... -
WO3-x THIN FILMS WITH Al, Pt Au AND Mo DOPING: SEARCHING FOR PIEZOELECTRICITY
Ramos Murillo, Manuel Antonio; Enriquez Carrejo, Jose Luis; Camacho Montes, Hector; 206521; Pineda Domínguez, Pamela Marcela; Nogan, John; Lopez Galan, Oscar Alberto; Boll, Torben; Hurtado Macias, Abel; Lopez, Jorge; Garay, Yahir; Heilmaier, Martin (Sociedad Mexicana de Materiales, 2022-08-15)The present work focuses on the fabrication of WO3 thin films doped with Al, Pt, Au and Mo with a thickness in a range of 150 nm – 250 nm. The films were deposited by radio-frequency sputtering at 225 W of RF power commercial ...