• Critical dimensions of MoS2, WS2 and WO3 thin films: Potential Photovoltaic Applications 

      Ramos Murillo, Manuel Antonio (2023-07-26)
      The study of the materials molybdenum disulfide (MoS2), molybdenum diselenide (MoSe2), and tungsten trioxide (WO3) in the form of a thin film is of great relevance, primarily to understand their physicochemical properties ...
    • MoS2 Thin Films for Photo-Voltaic Applications 

      Ramos Murillo, Manuel Antonio (Intech Open, 2019-10)
      The low dimensional chalcogenide materials with high band gap of ~1.8 eV, specially molybdenum di-sulfide (MoS2), have been brought much attention in the material science community for their usage as semiconducting materials ...
    • Películas delgadas de WO3 con dopaje de iones metálicos: En búsqueda de piezoelectricidad 

      Enriquez Carrejo, Jose Luis; Ramos Murillo, Manuel Antonio; 206521; Pineda, Pamela; Nogan, John; Boll, Torben; Hurtado, Abel; Heilmaier, Martin (Universidad Autónoma de Ciudad Juárez, 2021-11-11)
      El presente trabajo de investigación se enfoca en la fabricación de películas delgadas de WO3 con dopaje de iones metálicos (Al, Pt, Au, Mo), depositadas mediante pulverización catódica con potencia de radiofrecuencia y ...
    • Study of indium tin oxide–MoS2 interface by atom probe tomography 

      Ramos Murillo, Manuel Antonio (2019-12)
      The molybdenum disulfide (MoS2) and indium tin oxide (ITO) interface were studied by atom probe tomography (APT). Raman spectroscopy, scanning electron microscopy, and grazingincidence x-ray diffraction measurements were ...
    • The electronic states of ITO–MoS2: Experiment and theory 

      Ramos Murillo, Manuel Antonio; 187047; López Galan, Óscar; Nogan, John; Ávila-García, Alejandro; Boll, Torben; Heilmaier, Martin (2021-12-16)
      We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS2) interface. Our results indicate ...
    • The Piezoresponse in WO3 Thin Films Due to N2-Filled Nanovoids Enrichment by Atom Probe Tomography 

      Ramos Murillo, Manuel Antonio (2023-02-07)
      Tungsten trioxide (WO3) is a versatile n-type semiconductor with outstanding chromogenic properties highly used to fabricate sensors and electrochromic devices. We present a comprehensive experimental study related to ...
    • WO3-x THIN FILMS WITH Al, Pt Au AND Mo DOPING: SEARCHING FOR PIEZOELECTRICITY 

      Ramos Murillo, Manuel Antonio; Enriquez Carrejo, Jose Luis; Camacho Montes, Hector; 206521; Pineda Domínguez, Pamela Marcela; Nogan, John; Lopez Galan, Oscar Alberto; Boll, Torben; Hurtado Macias, Abel; Lopez, Jorge; Garay, Yahir; Heilmaier, Martin (Sociedad Mexicana de Materiales, 2022-08-15)
      The present work focuses on the fabrication of WO3 thin films doped with Al, Pt, Au and Mo with a thickness in a range of 150 nm – 250 nm. The films were deposited by radio-frequency sputtering at 225 W of RF power commercial ...

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