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AutorCarrillo, Amanda
Accedido2020-12-28T20:14:47Z
Disponible2020-12-28T20:14:47Z
Fecha de publicación2020-10-19es_MX
Identificador de objeto (URI)http://cathi.uacj.mx/20.500.11961/16039
Resumen/AbstractChalcogenide semiconductors and transition metal oxides present a wide and interesting range of physical and chemical properties were the magnetic, electrical, optical, catalytic and energy harvesting ones stand out. These materials have been used in the development of devices such as flat screen TVs, smart gaseous windows, optical write-read-erase devices, sensors (gas, humidity and temperature) and for field emission and solar cells and Thin Film Transistors. This study reports the optimization of the gate dielectric etching process and the active semiconductor layer for the manufacture of a P-type thin film transistor (TFT) by photolithography. The manufacture of TFT uses Hafnium Oxide (HfO2) as gate dielectric deposited by Atomic Layer Deposition (ALD), Copper Sulfide (CuS) as P-type active layer deposited by Chemical Bath Deposition (CBD) and Chromium (Cr) as gate metal (G), source metal (S) and drain metal (D) deposited by sputtering in a gate-bottom, top-contact (BGTC) structure. Hydrochloric acid (HCl) was used as an attacker of active layer of CuS. The etching of the dielectric layer was performed with optimized photolithography and negative photoresin was deposited before depositing the HfO2, avoiding the use of Buffered Oxide Etch (BOE). The electrical characterization of p-type TFT shows that the optimized manufacturing process is successful and scalable to any chalcogenide as active layer.es_MX
Descripción URIhttp://www.smctsm.org.mx/documentos/XIII-ICSMV/XIII-ICSMV-BOOK-OF-ABSTRACTS.pdfes_MX
Idioma ISOen_USes_MX
EditorialSociedad Mexicana de Ciencias y Tecnología de Superficies y Materiales A.C.es_MX
Referencias físicas o lógicasProducto de investigación IITes_MX
Referencias físicas o lógicasInstituto de Ingeniería y Tecnologíaes_MX
TemaTTFses_MX
TemaChalcogenideses_MX
TemaCBDes_MX
Área de conocimiento CONACYTinfo:eu-repo/classification/cti/7es_MX
TítuloProcess to manufacture thin film transistors by photolithography based of chalcogenide semiconductors deposited by CBDes_MX
Tipo de productoMemoria en abstractes_MX
Imagen repositoriohttp://ri.uacj.mx/vufind/thumbnails/rupiiit.png
Instituto (dcrupi)Instituto de Ingeniería y Tecnologíaes_MX
CosechableSies_MX
SubtipoInvestigaciónes_MX
AlcanceInternacionales_MX
País de la publicaciónMéxicoes_MX
CoautorSauceda Carvajal, Angel
CoautorJimenez Perez, Abimael
CoautorMireles Jr. Garcia, Jose
CoautorMota , Maria de la Luz
Tipo de eventoCongresoes_MX
Nombre de eventoXIII International Conference In Materials Surfaces And Vacuumes_MX
Línea de investigaciónSin línea de generaciónes_MX
Cuerpo académicoSin cuerpo académicoes_MX


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