• Growth chemistry and electrical performance of ultrathin alumina formed by area selective vapor phase infiltration 

      Mani Gonzalez, Pierre Giovanni; Snelgrove, Matthew; McFeely, Caitlin; Hughes, Gregory; Weiland, C; Woicik, Joshep; Shiel, Kyle; Ornelas, Carlos; Solis-Canto, Óscar; Cherkaoui, K; Hurley, P; Yadav, Pravind; Morris, Michael; McGlynn, Enda; O'Connor, Rob (2022-09-28)
      The growth chemistry and electrical performance of 5 nm alumina films, fabricated via the area-selective vapor phase infiltration (VPI) of trimethylaluminum into poly(2-vinylpyridine), are compared to a conventional plasma ...
    • MoS2 Thin Films for Photo-Voltaic Applications 

      Ramos Murillo, Manuel Antonio (Intech Open, 2019-10)
      The low dimensional chalcogenide materials with high band gap of ~1.8 eV, specially molybdenum di-sulfide (MoS2), have been brought much attention in the material science community for their usage as semiconducting materials ...

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