Listar IIT por autor "Helmaier, Martin"
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MoS2 Thin Films for Photo-Voltaic Applications
Ramos Murillo, Manuel Antonio (Intech Open, 2019-10)The low dimensional chalcogenide materials with high band gap of ~1.8 eV, specially molybdenum di-sulfide (MoS2), have been brought much attention in the material science community for their usage as semiconducting materials ... -
Study of indium tin oxide–MoS2 interface by atom probe tomography
Ramos Murillo, Manuel Antonio (2019-12)The molybdenum disulfide (MoS2) and indium tin oxide (ITO) interface were studied by atom probe tomography (APT). Raman spectroscopy, scanning electron microscopy, and grazingincidence x-ray diffraction measurements were ...